Electron-energy-loss scattering near a single misfit dislocation at the GaAs/GaInAs interface.

Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs-Ga0. 85Ino. [5As interface. %e observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scatterIng which is consistent with an excitation of transitions between a localized state near the dislocatio[& and the crystal conduction band. %ithin this interpretation, the energy of the state is estimated to be 0.7+ 0.05 eV above the GaAs valence-band maximum.